Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child's law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing she...

متن کامل

Bayesian group analysis of plasma-enhanced chemical vapour deposition data

A ubiquitous goal in plasma-enhanced chemical vapour deposition (PECVD) is to describe the correlation between film properties and categorical and quantitative input variables. The correlations within the high-dimensional parameter space are described using a multivariate model. Bayesian group analysis is employed to assess the grouping structures of the set of data vectors. This allows to iden...

متن کامل

Low-temperature plasma enhanced chemical vapour deposition of carbon nanotubes

Vertically aligned carbon nanotubes were selectively grown at temperatures as low as 120 8C by plasma enhanced chemical vapour deposition. We investigated the effects of acetylene, ethylene and methane as carbon source gases together with ammonia as an etchant and nickel as catalyst material. The diluted acetylene plasma gave the highest nanotube growth rate and showed the most intense C Swan b...

متن کامل

Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler

Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of Modern Physics: Conference Series

سال: 2014

ISSN: 2010-1945,2010-1945

DOI: 10.1142/s2010194514603421